Recent advances in doped Ge2Sb2Te5 thin film based phase change memories-Reference-Cited by-同舟云学术

Recent advances in doped Ge₂Sb₂Te₅ thin film based phase change memories

Published:2023 Issue:3 Volume:4 Page:747-768
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Bala Neeru¹,Khan Bheem¹,Singh Kamaljit¹,Singh Palwinder²,Singh Abhinav Pratap³^ORCID,Thakur Anup¹^ORCID

Affiliation:

1. Advanced Materials Research Lab, Department of Physics, Punjabi University Patiala, 147 002 Punjab, India

2. Department of Physics Atmospheric Science Dalhousie University, Halifax, NS, Canada

3. Department of Physics, Dr B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab 144 011, India

Abstract

Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves superior in the category of memory devices due to a combination of their unique set of properties.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MA/D2MA01047J

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