Realization of fast-speed and low-power phase change memory by optimizing Ge10Sb90 film with samarium doping

Abstract

In this paper, the Sm-doped Ge10Sb90 films were proposed and the effect of Sm doping on the crystal structure and electrical properties were investigated. The crystallization process of materials with different Sm concentrations was carried out by an in situ resistance measurement system, demonstrating that doping Sm can significantly improve the amorphous resistance, thermal stability, and bandgap of Ge10Sb90 film and alleviate the structural relaxation. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy show that the appropriate content of Sm doping can hinder the grain growth process, limiting the grain size to a certain extent. The phase change memory devices with Sm-doped Ge10Sb90 were prepared based on the CMOS process, and their electrical properties were evaluated. The outcomes indicate that Sm doping can remarkably ameliorate the high RESET current required for Sb-rich Ge10Sb90 films during erasing/writing operation.