Low-dimensional materials-based field-effect transistors-Reference-Cited by-同舟云学术

Low-dimensional materials-based field-effect transistors

Published:2018 Issue:5 Volume:6 Page:924-941
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang F. F.¹²³⁴⁵,Hu X. Y.¹²³⁴⁵^ORCID,Niu X. X.¹²³⁴⁵,Xie J. Y.¹²³⁴⁵,Chu S. S.¹²³⁴⁵,Gong Q. H.¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Mesoscopic Physics & Department of Physics

2. Collaborative Innovation Center of Quantum Matter

3. Peking University

4. Beijing 100871

5. P. R. China

Abstract

The review article summarizes the research on low-dimensional materials-based field-effect transistors, which will help in device downscaling.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC04819J

Reference106 articles.

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