Affiliation:
1. Department of Electronic Engineering The Chinese University of Hong Kong Shatin, New Territories Hong Kong SAR 999077 China
Abstract
AbstractAdvanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D‐materials‐based dual‐gate transistors are expected to meet these demands due to the ultra‐thin body and the dangling‐bond‐free surface. In this work, a molybdenum disulfide (MoS2) asymmetric‐dual‐gate field‐effect transistor (ADGFET) with an In2Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec−1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge‐trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six‐level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W−1, benefiting from the interface coupling between the double gates. Meanwhile, the photo‐memory property of ADGFET is also verified by using the varying exposure dosages‐dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.
Funder
Research Grants Council, University Grants Committee
Chinese University of Hong Kong
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献