Chemical-doping-driven crossover from graphene to “ordinary metal” in epitaxial graphene grown on SiC-Reference-Cited by-同舟云学术

Chemical-doping-driven crossover from graphene to “ordinary metal” in epitaxial graphene grown on SiC

Published:2017 Issue:32 Volume:9 Page:11537-11544
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chuang Chiashain¹²³⁴⁵,Yang Yanfei¹²³⁶⁷,Pookpanratana Sujitra¹²³^ORCID,Hacker Christina A.¹²³^ORCID,Liang Chi-Te⁴⁵⁸⁹⁴^ORCID,Elmquist Randolph E.¹²³^ORCID

Affiliation:

1. National Institute of Standards and Technology (NIST)

2. Gaithersburg

3. USA

4. Department of Physics

5. National Taiwan University

6. Joint Quantum Institute

7. University of Maryland

8. Taipei 106

9. Taiwan

Abstract

Atmospheric chemical doping can be used to modify the electronic properties of graphene.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR04155A

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