Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ-Reference-Cited by-同舟云学术

Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ

Published:2022-10-21 Issue:1 Volume:1 Page:2200015
ISSN:2751-1200
Container-title:Advanced Physics Research
language:en
Short-container-title:Advanced Physics Research

Author:

Yin Yefei¹,Chatterjee Atasi¹^ORCID,Momeni Davood¹^ORCID,Kruskopf Mattias¹^ORCID,Götz Martin¹,Wundrack Stefan¹^ORCID,Hohls Frank¹,Pierz Klaus¹^ORCID,Schumacher Hans W.¹

Affiliation:

1. Physikalisch‐Technische Bundesanstalt Bundesallee 100 38116 Braunschweig Germany

Funder

European Metrology Programme for Innovation and Research

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/apxr.202200015

Reference53 articles.

1. Epitaxial graphene: the material for graphene electronics

2. Device applications of epitaxial graphene on silicon carbide

3. Room-Temperature Quantum Hall Effect in Graphene

4. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

5. Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties

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