Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures-Reference-Cited by-同舟云学术

Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures

Author:

Fang Y. X.¹²³⁴,Zhang H.¹²³⁴,Azad F.⁵⁶⁷⁸,Wang S. P.⁹¹⁰¹¹,Ling F. C. C.¹²¹³¹⁴¹⁵,Su S. C.¹²³⁴¹²^ORCID

Affiliation:

1. Institute of Optoelectronic Material and Technology

2. South China Normal University

3. Guangzhou 510631

4. P. R. China

5. School of Natural Sciences (SNS)

6. National University of Sciences and Technology (NUST)

7. H-12 Islamabad

8. Pakistan

9. Institute of Applied Physics and Materials Engineering

10. University of Macau

11. China

12. Department of Physics

13. The University of Hong Kong

14. Hong Kong

15. People's Republic of China

Abstract

High-quality γ-In₂Se₃ thin films and a γ-In₂Se₃/p-Si heterojunction were prepared using pulse laser deposition (PLD).

Funder

National Natural Science Foundation of China

Universidade de Macau

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference42 articles.

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