A Self-Selector and Self-Rectifying Charge-Trap-Based Resistive Switching Device Using In<sub>2</sub>Se<sub>3</sub> Thin Films-Reference-Cited by-同舟云学术

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A Self-Selector and Self-Rectifying Charge-Trap-Based Resistive Switching Device Using In₂Se₃ Thin Films

Published:2024-05-06 Issue:5 Volume:6 Page:3742-3753
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chanchal ¹,Jindal Kajal²^ORCID,Tomar Monika³^ORCID,Jha Pradip K.⁴

Affiliation:

1. Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India

2. Department of Physics, Kirori Mal College, University of Delhi, Delhi 110007, India

3. Department of Physics, Miranda House, University of Delhi, Delhi 110007, India

4. Department of Physics, Deen Dayal Upadhyaya College, University of Delhi, Delhi 110078, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00386

Reference42 articles.

1. Analog and Digital Mode α‐In 2 Se 3 Memristive Devices for Neuromorphic and Memory Applications

2. Towards engineering in memristors for emerging memory and neuromorphic computing: A review

3. A self-rectifying TaOy/nanoporous TaOx memristor synaptic array for learning and energy-efficient neuromorphic systems

4. Monolithic In2Se3–In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs

5. Recent Progress in Two‐Dimensional Ferroelectric Materials

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