Analog and Digital Mode α‐In 2 Se 3 Memristive Devices for Neuromorphic and Memory Applications-Reference-Cited by-同舟云学术

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Analog and Digital Mode α‐In 2 Se 3 Memristive Devices for Neuromorphic and Memory Applications

Published:2021-08-22 Issue:12 Volume:7 Page:2100609
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Yishu¹,Wang Lin¹,Chen Hao¹,Ma Teng¹,Lu Xiufang¹,Loh Kian Ping¹^ORCID

Affiliation:

1. Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117543 Singapore

Funder

Agency for Science, Technology and Research

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100609

Reference37 articles.

1. Power-constrained CMOS scaling limits

2. Thin-film ferroelectric materials and their applications

3. Phase Change Memory

4. Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

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3. A Self-Selector and Self-Rectifying Charge-Trap-Based Resistive Switching Device Using In₂Se₃ Thin Films;ACS Applied Electronic Materials;2024-05-06

4. One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing;Angewandte Chemie International Edition;2024-04-10

5. One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing;Angewandte Chemie;2024-04-10

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