Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film-Reference-Cited by-同舟云学术

Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film

Published:2015 Issue:45 Volume:17 Page:30248-30254
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wan Zhenni¹²³⁴,Darling Robert B.¹²³⁴,Anantram M. P.¹²³⁴

Affiliation:

1. Department of Electrical Engineering

2. University of Washington

3. Seattle

4. USA

Abstract

Electrical properties of a Cr/V₂O₅/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (<1 V). Diode-like or resistor-like behavior is obtained after switching, depending on the polarity of the first applied bias.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP04755B

Reference20 articles.

1. In Situ Deposition and Ultrahigh Vacuum STM/AFM Study of V[sub 2]O[sub 5]/Li[sub 3]PO[sub 4] Interface in a Rechargeable Lithium-Ion Battery

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3. Enhanced Electrochromism in Gyroid-Structured Vanadium Pentoxide

4. Structure, properties, and MEMS and microelectronic applications of vanadium oxides

5. Stable and erasable patterning of vanadium pentoxide thin films by atomic force microscope nanolithography

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