Metal-enhanced Ge1−xSnx alloy film growth on glass substrates using a biaxial CaF2 buffer layer-Reference-Cited by-同舟云学术

Metal-enhanced Ge1−xSnx alloy film growth on glass substrates using a biaxial CaF2 buffer layer

Published:2014 Issue:37 Volume:16 Page:8794-8804
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Dash J. K.¹²³⁴,Chen L.¹²³⁴,Lu T.-M.¹²³⁴,Wang G.-C.¹²³⁴,Zhang L. H.⁵⁶⁷,Kisslinger K.⁵⁶⁷

Affiliation:

1. Department of Physics

2. Applied Physics and Astronomy

3. Rensselaer Polytechnic Institute

4. Troy, USA

5. Brookhaven National Lab

6. Center for Functional Nanomaterials Bldg. 735

7. , USA

Abstract

The Ge_1−xSn_x(111) alloy formation process at the early stage and later stage of Ge deposition on a biaxial Sn/CaF₂ (capping layer + NR)/glass substrate at an elevated growth temperature.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01228C

Reference34 articles.

1. Growth of silicon based germanium tin alloys

2. Determination of the optical energy gap of Ge1−xSnx alloys with 0

3. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

4. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

5. GeSn p-i-n detectors integrated on Si with up to 4% Sn

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