Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures
Author:
Affiliation:
1. Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province
2. and College of Information Engineering
3. China Jiliang University
4. Hangzhou
5. People's Republic of China
Abstract
Schematic illustration of strain-mediated magnetization precessional switching and a domain wall injection mechanism in a nano-magnet with in-plane shape anisotropy.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Zhejiang Province
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR02595J
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1. Magnetic Domain-Wall Logic
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