Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions-Reference-Cited by-同舟云学术

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions

Published:2016 Issue:40 Volume:18 Page:27750-27753
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wang Cong¹²³⁴⁵,Yang Shengxue⁶⁷⁸⁵,Xiong Wenqi⁹¹⁰¹¹⁵,Xia Congxin⁹¹⁰¹¹⁵,Cai Hui¹²¹³¹⁴¹⁵¹⁶,Chen Bin¹²¹³¹⁴¹⁵¹⁶,Wang Xiaoting¹⁷¹⁸¹⁹²⁰⁵,Zhang Xinzheng¹²³⁴⁵,Wei Zhongming¹⁷¹⁸¹⁹²⁰⁵,Tongay Sefaattin¹²¹³¹⁴¹⁵¹⁶,Li Jingbo¹⁷¹⁸¹⁹²⁰⁵,Liu Qian¹²³⁴⁵

Affiliation:

1. The MOE Key Laboratory of Weak-Light Nonlinear Photonics

2. TEDA Institute of Applied Physics

3. Nankai University

4. Tianjin 300457

5. China

6. School of Materials Science and Engineering

7. Beihang University

8. Beijing 100191

9. Department of Physics

10. Henan Normal University

11. Xinxiang 453007

12. School for Engineering of Matter

13. Transport and Energy

14. Arizona State University

15. Tempe

16. USA

17. State Key Laboratory of Superlattices and Microstructures

18. Institute of Semiconductors

19. Chinese Academy of Science

20. Beijing 100083

Abstract

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) are widely studied due to their fascinating properties.

Funder

National Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP04752A

Reference21 articles.

1. Single-layer MoS2 transistors

2. Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering