Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films

Author:

Zhang W. L.12345,Tang M. H.12345,Xiong Y.6345,Wang K.12345,Wang Z. P.7895,Xiao Y. G.12345,Yan S. A.12345,Li Z.12345,He J.10111213

Affiliation:

1. Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province)

2. School of Material Sciences and Engineering

3. Xiangtan University

4. Xiangtan

5. China

6. The School of Mathematics and Computational Science

7. School of Automotive Engineering

8. Weifang University of Science and Technology

9. Weifang

10. Pacific Geoscience Centre

11. Geological Survey of Canada

12. Sidney

13. Canada V8L 4B2

Abstract

Highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin films with a Bi4Ti3O12 (BTO) seeding layer were prepared. The effects of BTO layer under annealing temperature from 550 to 700 °C on the structural and electrical properties of BNTM were studied.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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