Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI<sub>3</sub> perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices-Reference-Cited by-同舟云学术

Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI₃ perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

Published:2023 Issue:15 Volume:15 Page:6960-6975
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

George Twinkle¹,Vadivel Murugan Arumugam¹^ORCID

Affiliation:

1. Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry-605014, India

Abstract

The effect of substitutional cation doping in the A-site of the nanoscale APbI3 perovskite layer has been systematically investigated to achieve improvements in the charge-carrier dynamics and endurance of non-volatile bipolar (NVB) memory devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR07007C

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