Improvement of the gas cluster ion beam-(GCIB)-based molecular secondary ion mass spectroscopy (SIMS) depth profile with O2+ cosputtering
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. National Taiwan University
3. Taipei
4. Taiwan
5. Research Center for Applied Sciences
6. Academia Sinica
Abstract
The Ar2500+ and O2+ cosputter in ToF-SIMS depth profiles retained >95% molecular ion intensity in the steady-state.
Funder
Academia Sinica
Ministry of Science and Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Electrochemistry,Spectroscopy,Environmental Chemistry,Biochemistry,Analytical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/AN/C5AN02677F
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