Soft Ion Sputtering of PAni Studied by XPS, AFM, TOF-SIMS, and STS

Abstract

Herein is a study of the soft sputtering method, gas cluster ion sputtering (GCIS), and its effects on the atomic, morphologic, and band structure properties of polyaniline (PAni) as studied with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry, atomic force microscopy, and scanning tunneling spectroscopy (STS). The GCIS source used was a 1000 argon atom cluster with 4 keV energy, which resulted in a sputter yield of 3.4 ± 0.2 × 10−3 nm3 per argon atom. Soft ion sputtering reduced the sample by explicitly removing the oxidized contaminants as determined by surface sensitive techniques: XPS and Time-of-flight secondary ion mass spectrometry (TOF-SIMS). By the use of STS we found that by removing the oxidized components, an overall shift of electronic states occurred, transitioning the states closer to the Fermi edge by 0.3 V.