A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping-Reference-Cited by-同舟云学术

A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping

Published:2021 Issue:36 Volume:9 Page:12353-12366
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Palade Catalin¹^ORCID,Lepadatu Ana-Maria¹^ORCID,Slav Adrian¹^ORCID,Cojocaru Ovidiu¹²^ORCID,Iuga Alin¹^ORCID,Maraloiu Valentin Adrian¹^ORCID,Moldovan Antoniu³^ORCID,Dinescu Maria³^ORCID,Teodorescu Valentin Serban¹⁴^ORCID,Stoica Toma¹^ORCID,Ciurea Magdalena Lidia¹⁴^ORCID

Affiliation:

1. National Institute of Materials Physics, 077125 Magurele, Romania

2. University of Bucharest, Faculty of Physics, 077125 Magurele, Romania

3. National Institute for Laser, Plasma and Radiation Physics, 077125 Magurele, Romania

4. Academy of Romanian Scientists, 050094 Bucharest, Romania

Abstract

A transition from the monoclinic to ferroelectric orthorhombic phase, takes place within a region of few atomic layers of single HfO2 crystals. Atomic calculations show high stability of the ferroelectric orthorhombic phase.

Funder

Ministerul Educaţiei şi Cercetării Ştiinţifice

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02921E

Reference49 articles.

1. The Past, the Present, and the Future of Ferroelectric Memories

2. Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance

3. A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device