Silk-based organic photoresists for extreme ultraviolet lithography: a multiscale <i>in silico</i> study-Reference-Cited by-同舟云学术

Silk-based organic photoresists for extreme ultraviolet lithography: a multiscale in silico study

Published:2023 Issue:13 Volume:11 Page:4415-4425
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yoon Taeyoung¹,Park Wooboum¹,Kim Yoonjung¹,Choi Hyunsung²,Chung Soonchun³,Park Joonsong³,Chang Hyun Joon⁴,Na Sungsoo¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, Korea University, 02841, Seoul, Republic of Korea

2. Institute of Industrial Technology, Korea University, 30019, Sejong, Korea

3. Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Yeongtong-Gu, Suwon, 16678, Republic of Korea

4. HITS Inc., 124, Teheran-ro, Gangnam-gu, Seoul, 06234, Republic of Korea

Abstract

The development of photoresists (PRs) for extreme ultraviolet (EUV) lithography has become increasingly popular in the field of semiconductor nanopatterning.

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Samsung Advanced Institute of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC04053K

Reference60 articles.

1. Lithography gets extreme

2. Mechanistic insights of Sn-based non-chemically-amplified resists under EUV irradiation

3. Photoacid generator–polymer interaction on the quantum yield of chemically amplified resists for extreme ultraviolet lithography

4. Molecular excitation and relaxation of extreme ultraviolet lithography photoresists

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