A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory-Reference-Cited by-同舟云学术

A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory

Published:2020 Issue:4 Volume:5 Page:654-662
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Kim Kwan-Ho¹²³⁴,Park Hyung-Youl¹²³⁴,Shim Jaewoo⁵⁶⁷⁸,Shin Gicheol⁹²³⁴,Andreev Maksim¹²³⁴,Koo Jiwan¹²³⁴,Yoo Gwangwe¹²³⁴,Jung Kilsu¹²³⁴,Heo Keun¹²³⁴,Lee Yoonmyung⁹²³⁴,Yu Hyun-Yong¹⁰¹¹¹²⁴,Kim Kyung Rok¹³¹⁴¹⁵⁴,Cho Jeong Ho¹⁶¹⁷¹⁸⁴^ORCID,Lee Sungjoo¹²³⁴¹⁹^ORCID,Park Jin-Hong¹²³⁴¹⁹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering

2. Sungkyunkwan University

3. Suwon 16419

4. Korea

5. Department of Mechanical Engineering

6. Massachusetts Institute of Technology (MIT)

7. Cambridge

8. USA

9. Department of Semiconductor System Engineering

10. School of Electrical Engineering

11. Korea University

12. Seoul 02841

13. School of Electrical and Computer Engineering

14. Ulsan National Institute of Science and Technology (UNIST)

15. Ulsan 44919

16. Department of Chemical and Biomolecular Engineering

17. Yonsei University

18. Seoul 03722

19. SKKU Advanced Institute of Nanotechnology (SAINT)

Abstract

For increasing the bit-density in the conventional binary logic system, various efforts have been made toward implementing single devices with two threshold voltage (V_TH) via the negative differential resistance (NDR) phenomenon.

Funder

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NH/C9NH00631A

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