A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process-Reference-Cited by-同舟云学术

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process

Published:2024-04-13 Issue:4 Volume:15 Page:522
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Lu Bin¹,Ma Xin¹,Wang Dawei¹,Chai Guoqiang¹,Chen Yulei¹^ORCID,Li Zhu¹,Dong Linpeng²

Affiliation:

1. School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030024, China

2. Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi’an Technological University, Xi’an 710032, China

Abstract

In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an additional intermediate state between the on and off states. Based on the tri-state behavior of the proposed TDFET (tunneling and drift-diffusion field-effect transistor), a ternary inverter is designed and its operation principle is studied in detail. It was found that this device achieves ternary logic with only two components, and its structure is simple. In addition, the influence of the supply voltage and the key device parameters are also investigated.

Funder

National Natural Science Foundation of China

Applied Basic Research Plan of Shanxi Province

Publisher

MDPI AG

Link

https://www.mdpi.com/2072-666X/15/4/522/pdf

Reference36 articles.

1. Tunnelling-based ternary metal–oxide–semiconductor technology;Jeong;Nat. Electron.,2019

2. Compact design of low power standard ternary inverter based on OFF-state current mechanism using nano-CMOS technology;Shin;IEEE Trans. Electron Devices,2015

3. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits;Roy;Proc. IEEE,2003

4. Recent advances on multivalued logic gates: A materials perspective;Jo;Adv. Sci.,2021

5. Is negative capacitance FET a steep-slope logic switch?;Cao;Nat. Commun.,2020