Control of hexagonal boron nitride dielectric thickness by single layer etching-Reference-Cited by-同舟云学术

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Control of hexagonal boron nitride dielectric thickness by single layer etching

Published:2019 Issue:21 Volume:7 Page:6273-6278
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ma Zichao¹²³⁴^ORCID,Prawoto Clarissa¹²³⁴^ORCID,Ahmed Zubair¹²³⁴,Xiao Ying¹²³⁴,Zhang Lining⁵⁶⁷⁸,Zhou Changjian⁹¹⁰¹¹⁸,Chan Mansun¹²³⁴

Affiliation:

1. Department of Electronic & Computer Engineering

2. Hong Kong University of Science and Technology

3. Kowloon

4. Hong Kong

5. College of Electronic Science and Technology

6. Shenzhen University

7. Shenzhen

8. China

9. School of Electronic and Information Engineering

10. South China University of Technology

11. Guangzhou

Abstract

Single layer etching of h-BN is achieved using a two-step remote plasma process.

Funder

Croucher Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC00896A

Reference35 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

3. Van der Waals heterostructures and devices

4. Identifying suitable substrates for high-quality graphene-based heterostructures

5. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

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