Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners
Author:
Affiliation:
1. Research Institute of Surface Engineering
2. Taiyuan University of Technology
3. Taiyuan City 030024, P. R. China
4. Institute of Materials
5. Ningbo University of Technology
6. Ningbo City 315016, P. R. China
Abstract
We report the enhanced field emission of B-doped SiC nanowires with a low turn-on field and enhanced high-temperature stability.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00524D
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