Three-dimensional branched SiC nanowire field emitters with single-crystal integrated structures and increased emission sites: ultralow turn-on field and high stability-Reference-Cited by-同舟云学术

Three-dimensional branched SiC nanowire field emitters with single-crystal integrated structures and increased emission sites: ultralow turn-on field and high stability

Published:2023 Issue:47 Volume:11 Page:16473-16481
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Jianhong¹²,Yang Yang³,Song Kai²,Li Weijun²,Wang Hulin²,Vityuk Nadiya²⁴,Klymenko Nataliia²⁴,Krupska Tetyana V.²⁴,Turov Vladimir V.²⁴,Zhao Xinsheng¹,Yang Weiyou²^ORCID,Chen Shanliang²^ORCID,Li Xiaoxiao¹^ORCID

Affiliation:

1. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou City, 221116, P. R. China

2. Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City, 315211, P. R. China

3. Ningbo Institute of Measurement and Testing, Ningbo City, 315048, P. R. China

4. Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, Ukraine

Abstract

High-performance single-crystal integrated three-dimensional nanowire field emitters with high-density SiC dendrites surrounding SiC backbone nanowires were explored.

Funder

Natural Science Research of Jiangsu Higher Education Institutions of China

Science and Technology Support Program of Jiangsu Province

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02903D

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