Superior CoO/SiC nanowire field emitters with substantially increased stable emission sites: ultralow turn-on field, high current density and high stability-Reference-Cited by-同舟云学术

Superior CoO/SiC nanowire field emitters with substantially increased stable emission sites: ultralow turn-on field, high current density and high stability

Published:2023 Issue:31 Volume:11 Page:10464-10473
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Song Kai¹²³⁴,Li Xiaoxiao¹⁵,Li Weijun¹,Wang Lin¹,Gong Chuangchuang²³,Hu Feng¹,Gao Fengmei¹,He Fang²³^ORCID,Chen Shanliang¹^ORCID

Affiliation:

1. Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City, 315211, P. R. China

2. School of Materials Science and Engineering, Tianjin University, Tianjin City, 300350, P. R. China

3. Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin City, 300350, P. R. China

4. Shanxi Key Laboratory of Metal Forming Theory and Technology, Taiyuan University of Science and Technology, Taiyuan 030024, P. R. China

5. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou City, 221116, P. R. China

Abstract

We explored high-performance field emitters with numerous CoO nanoparticles surrounding SiC nanowires for increasing emission sites, which exhibited ultralow turn-on field (0.40 V μm−1), high current density (18.6 mA cm−2) and high emission stability.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Ningbo Municipal People's Government

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC04007G

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