First-principles study of Ga-vacancy induced magnetism in β-Ga2O3-Reference-Cited by-同舟云学术

First-principles study of Ga-vacancy induced magnetism in β-Ga2O3

Published:2017 Issue:42 Volume:19 Page:28928-28935
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yang Ya¹²³⁴⁵,Zhang Jihua⁶⁷⁸⁵,Hu Shunbo⁹¹⁰⁵^ORCID,Wu Yabei¹²³⁴⁵,Zhang Jincang¹²³⁴⁵,Ren Wei¹²³⁴⁵^ORCID,Cao Shixun¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics, and International Center of Quantum and Molecular Structures

2. Materials Genome Institute

3. Shanghai University

4. Shanghai 200444

5. China

6. Guizhou Provincial Key Laboratory of Computational Nano-Material Science

7. Guizhou Education University

8. Guiyang 550018

9. Shanghai Materials Genome Institute

10. Shanghai

Abstract

First principles calculations based on density functional theory were performed to study the electronic structure and magnetic properties of β-Ga₂O₃ in the presence of cation vacancies.

Funder

National Natural Science Foundation of China

Shanghai Municipal Education Commission

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP03675B

Reference56 articles.

1. ferromagnetism

2. Unexpected magnetism in a dielectric oxide

3. Ferromagnetism inHfO2induced by hole doping: First-principles calculations

4. Ferromagnetism Driven by Intrinsic Point Defects inHfO2

5. Electronic and magnetic properties of the cation vacancy defect inm−HfO2

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