Dopant concentration dependent room temperature ferromagnetism in crystalline Sc doped AlN thin films-Reference-Cited by-同舟云学术

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Dopant concentration dependent room temperature ferromagnetism in crystalline Sc doped AlN thin films

Published:2023-10 Issue: Volume:961 Page:170986
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhu Zishu,Ou Zhanpeng,Chen Yanpu,Zhao JiaXin,Zhu Wei,Ma Pingping,Lou Liren,Pan Bicai

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

1. Magnetic properties of transition metal doped AlN nanosheet: first-principle studies;Shi;J. Appl. Phys.,2014

2. AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices;Lin;Appl. Phys. Lett.,2010

3. Room temperature luminescence and ferromagnetism of AlN:Fe;Li;AIP Adv.,2016

4. Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering;Akiyama;Adv. Mater.,2009

5. A review: aluminum nitride MEMS contour-mode resonator;Hou;J. Semicond.,2016

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