Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system-Reference-Cited by-同舟云学术

Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system

Published:2018 Issue:12 Volume:6 Page:2962-2969
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ye Shujun¹²³⁴^ORCID,Nozaki Tomohiro¹²³⁴,Kotani Yoshinori⁵⁶⁴,Toyoki Kentaro⁵⁶⁴,Nakamura Tetsuya⁵⁶⁴,Yonemura Syougo⁷⁸⁴,Shibata Tatsuo⁷⁸⁴,Pati Satya Prakash¹²³⁴,Al-Mahdawi Muftah¹²³⁴,Shiokawa Yohei¹²³⁴,Sahashi Masashi¹²³⁴⁹

Affiliation:

1. Graduate School of Engineering

2. Tohoku University

3. Sendai 980-0845

4. Japan

5. Japan Synchrotron Radiation Research Institute (JASRI)/Spring-8

6. Hyogo 679-5198

7. Advanced Technology Development Center, TDK Corporation

8. Chiba 272-0026

9. ImPACT Program, Japan Science and Technology Agency

Abstract

Inserted metals work as a part of a stacked ferromagnetic film for low-energy magnetoelectric switching in a Cr₂O₃–antiferromagnet/ferromagnet interfacial exchange-biased system.

Funder

Cabinet Office, Government of Japan

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05375D

Reference39 articles.

1. An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories

2. New Magnetic Anisotropy