Magnetoelectric Switching Energy of Antiferromagnetic Cr 2 O 3 Used for Spintronic Logic Devices and Memory
Author:
Affiliation:
1. Center for Innovative Integrated Electronic Systems Tohoku University Sendai 980-0845 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100396
Reference54 articles.
1. Antiferromagnetic spin textures and dynamics
2. Synthetic antiferromagnetic spintronics
3. Spin transport and spin torque in antiferromagnetic devices
4. The multiple directions of antiferromagnetic spintronics
5. Magnetoelectric Effects in Cr2O3 and (Cr2O3)0.8· (Al2O3)0.2
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