Simulation of conformality of ALD growth inside lateral channels: comparison between a diffusion–reaction model and a ballistic transport–reaction model
Author:
Affiliation:
1. Department of Chemical and Metallurgical Engineering, School of Chemical Engineering, Aalto University, P.O. Box 16100, FI-00076 AALTO, Finland
Abstract
Funder
Academy of Finland
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01829F
Reference46 articles.
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3. C. S.Hwang and C. Y.Yoo , Atomic Layer Deposition for Semiconductors , Springer , New York, New York, NY , 2013
4. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors
5. A Critical Review: The Impact of the Battery Electrode Material Substrate on the Composition and Properties of Atomic Layer Deposition (ALD) Coatings
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