Self-limiting nitrogen/hydrogen plasma radical chemistry in plasma-enhanced atomic layer deposition of cobalt-Reference-Cited by-同舟云学术

Self-limiting nitrogen/hydrogen plasma radical chemistry in plasma-enhanced atomic layer deposition of cobalt

Published:2022 Issue:12 Volume:14 Page:4712-4725
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu Ji¹^ORCID,Lu Hongliang²^ORCID,Zhang David Wei²,Nolan Michael¹^ORCID

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland

2. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China

Abstract

Surface NHxspecies are removed completely on Co(001) surface, but they are incorporated on Co(100) surface with forming Co–N bonds.

Funder

Science Foundation Ireland

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR05568B

Reference49 articles.

1. Recent advances on electromigration in very-large-scale-integration of interconnects

2. Ru passivated and Ru doped ε-TaN surfaces as a combined barrier and liner material for copper interconnects: a first principles study

3. Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications

4. Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

5. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

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