Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition-Reference-Cited by-同舟云学术

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Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

Published:2012-03 Issue:2 Volume:30 Page:020604
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Chakraborty Tonmoy,Eisenbraun Eric T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3684597

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper;Journal of Physics: Materials;2023-06-30

2. Self-limiting nitrogen/hydrogen plasma radical chemistry in plasma-enhanced atomic layer deposition of cobalt;Nanoscale;2022

3. Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets;The Journal of Physical Chemistry C;2020-05-15

4. Coverage and Stability of NHx-Terminated Cobalt and Ruthenium Surfaces: A First-Principles Investigation;The Journal of Physical Chemistry C;2019-09-24

5. Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor;Nanoscale Research Letters;2019-03-04

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