Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes-Reference-Cited by-同舟云学术

Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes

Published:2016 Issue:58 Volume:6 Page:53310-53318
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kim Da Eun¹²³⁴,Cho Sung Woon¹²³⁴,Kim Bora¹²³⁴,Shin Jae Hui¹²³⁴,Kang Won Jun¹²³⁴,Yun Myeong Gu¹²³⁴,Beak Seung Ki¹²³⁴,Cho Hyung Koun¹²³⁴,Kim Yong-Hoon¹²³⁴,Kim Yunseok¹²³⁴

Affiliation:

1. School of Advanced Materials Science and Engineering

2. Sungkyunkwan University

3. Suwon

4. Republic of Korea

Abstract

We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA09684K

Reference40 articles.

1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2. Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates

3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

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