Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography-Reference-Cited by-同舟云学术

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Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography

Published:2019 Issue:14 Volume:21 Page:2281-2285
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Kim Jaemyung¹²³⁴⁵,Seo Okkyun¹²³⁴⁵,Song Chulho⁶⁷⁸⁹¹⁰^ORCID,Hiroi Satoshi⁶⁷⁸⁹¹⁰,Chen Yanna⁶⁷⁸⁹¹⁰^ORCID,Irokawa Yoshihiro¹²³⁴⁵,Nabatame Toshihide¹²³⁴⁵,Koide Yasuo¹²³⁴⁵,Sakata Osami¹²³⁴⁵^ORCID

Affiliation:

1. Center for GaN Characterization

2. Research Network and Facility Services Division (RNFS)

3. National Institute for Materials Science (NIMS)

4. Tsukuba

5. 305-0047 Japan

6. Synchrotron X-ray Group

7. Research Center for Advanced Measurement and Characterization

8. NIMS

9. Sayo

10. 679-5148 Japan

Abstract

We have studied the lattice-plane modulation of Mg-doped GaN homoepitaxial layers by X-ray diffraction topography.

Funder

National Institute for Materials Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01906A

Reference31 articles.

1. Excellent crystallinity of truly bulk ammonothermal GaN

2. Bulk GaN crystals grown by HVPE

3. Nearly perfect GaN crystal via pit-assisted growth by HVPE

4. Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds

5. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

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1. Visualizing local bending of lattice planes by extending two-azimuth synchrotron X-ray diffraction datasets to asymmetric reflection;Science and Technology of Advanced Materials: Methods;2023-05-12

2. Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography;Journal of Crystal Growth;2022-04

3. High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films;Physical Review Materials;2021-10-14

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