Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes-Reference-Cited by-同舟云学术

Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes

Published:2017 Issue:31 Volume:7 Page:19189-19196
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Marvi Z.¹²³⁴⁵,Xu S.¹²³⁴,Foroutan G.⁵⁶⁷⁸⁹,Ostrikov K.¹⁰¹¹¹²¹³¹⁴,Levchenko I.¹²³⁴¹⁴

Affiliation:

1. Plasma Sources and Applications Centre

2. NIE

3. Nanyang Technological University

4. 637616 Singapore

5. Physics Department

6. Faculty of Science

7. Sahand University of Technology

8. Tabriz

9. Iran

10. CSIRO-QUT Joint Sustainable Materials and Devices Laboratory

11. CSIRO

12. Lindfield

13. Australia

14. School of Chemistry

Abstract

Physical and chemical mechanisms and role of plasma in the synthesis of hydrogenated amorphous silicon were studied numerically to reveal the key growth processes and, hence, to ensure a higher level of control over the film structure and properties.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA00478H

Reference42 articles.

1. Photoelectric efficiency enhancement of a polycrystalline silicon solar cell coated with an EVA film containing Eu3+ complex by addition of modified SiO2

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4. Fabrication of high performance thin-film transistors via pressure-induced nucleation

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