Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning
Author:
Affiliation:
1. SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
Abstract
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC04148G
Reference55 articles.
1. One-Dimensional Electrical Contact to a Two-Dimensional Material
2. Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts
3. A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction
4. Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials
5. End-Bonded Metal Contacts on WSe2 Field-Effect Transistors
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