End-Bonded Metal Contacts on WSe2 Field-Effect Transistors-Reference-Cited by-同舟云学术

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End-Bonded Metal Contacts on WSe2 Field-Effect Transistors

Published:2019-06-17 Issue:7 Volume:13 Page:8146-8154
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chu Chun-Hao¹,Lin Ho-Chun²³,Yeh Chao-Hui¹,Liang Zheng-Yong¹^ORCID,Chou Mei-Yin²³,Chiu Po-Wen¹²⁴^ORCID

Affiliation:

1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

3. Department of Physics, National Taiwan University, Taipei 10617, Taiwan

4. Frontier Research Center on Fundamental and Applied Science of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan

Funder

Academia Sinica

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b03250

Reference47 articles.

1. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

2. Electrical contacts to two-dimensional semiconductors

3. Electronics based on two-dimensional materials

4. Single-layer MoS2 transistors

5. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

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