A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2

A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

Published:2019-05-08 Issue:25 Volume:31 Page:1808231
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yang Zheng¹,Kim Changsik¹,Lee Kwang Young¹,Lee Myeongjin¹,Appalakondaiah Samudrala¹,Ra Chang‐Ho¹,Watanabe Kenji²,Taniguchi Takashi²,Cho Kyeongjae³,Hwang Euyheon¹,Hone James⁴,Yoo Won Jong¹^ORCID

Affiliation:

1. SKKU Advanced Institute of Nano‐Technology (SAINT)Sungkyunkwan University 2066 Seobu‐ro Jangan‐gu, Suwon Gyeonggi‐do 16419 Republic of Korea

2. National Institute for Materials Science Namiki Tsukuba 305‐0044 Japan

3. Department of Materials Science and Engineering and Department of PhysicsUniversity of Texas at Dallas Richardson TX 75083 USA

4. Department of Mechanical EngineeringColumbia University New York NY 10027 USA

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201808231

Reference39 articles.

1. Electron tunneling and contact resistance of metal-silicon contact barriers

2. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

3. Halbleitertheorie der Sperrschicht

4. The theory of crystal rectifiers

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