High-resolution structural mapping and single-domain switching kinetics in 2D-confined ferroelectric nanodots for low-power FeRAM-Reference-Cited by-同舟云学术

High-resolution structural mapping and single-domain switching kinetics in 2D-confined ferroelectric nanodots for low-power FeRAM

Published:2020 Issue:22 Volume:12 Page:11997-12006
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Yingxin¹²³⁴^ORCID,Xu Minhui¹²³⁴,Hu Xin¹²³⁴,Yue Yifeng¹²³⁴,Zhang Xuefeng¹²³⁴,Shen Qundong⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. College of Materials & Environmental Engineering

2. Hangzhou Dianzi University

3. Hangzhou 310018

4. China

5. Department of Polymer Science & Engineering and Key Laboratory of High Performance Polymer Materials & Technology of MOE

6. School of Chemistry & Chemical Engineering

7. Nanjing University

8. Nanjing

Abstract

2D-confined P(VDF-TrFE) nanodots with well-orientation crystals have been fabricated by the nano-imprinting lithography, and the structural maps and domain switching kinetics of P(VDF-TrFE) nanodots were characterized by AFM-based technology.

Funder

National Natural Science Foundation of China

Hangzhou Dianzi University

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR02210A

Reference38 articles.

1. Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor

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