Robust bi-stable memory operation in single-layer graphene ferroelectric memory-Reference-Cited by-同舟云学术

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

Published:2011-07-25 Issue:4 Volume:99 Page:042109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Song Emil B.,Lian Bob,Min Kim Sung,Lee Sejoon,Chung Tien-Kan,Wang Minsheng,Zeng Caifu,Xu Guangyu,Wong Kin,Zhou Yi,Rasool Haider I.,Seo David H.,Chung Hyun-Jong,Heo Jinseong,Seo Sunae,Wang Kang L.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3619816

Reference18 articles.

1. The electronic properties of graphene

2. Nonvolatile Switching in Graphene Field-Effect Devices

3. Graphene-Based Atomic-Scale Switches

4. Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current

5. Gate-controlled nonvolatile graphene-ferroelectric memory

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