Ordered arrays of a defect-modified ferroelectric polymer for non-volatile memory with minimized energy consumption-Reference-Cited by-同舟云学术

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Ordered arrays of a defect-modified ferroelectric polymer for non-volatile memory with minimized energy consumption

Published:2014-09-22 Issue:22 Volume:6 Page:13945-13951
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Xiang-Zhong,Chen Xin,Guo Xu,Cui Yu-Shuang,Shen Qun-Dong,Ge Hai-Xiong

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR03866E

Reference33 articles.

1. Towards the Development of Flexible Non-Volatile Memories

2. Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory

3. Synthesis, Morphology, and Properties of Poly(3-hexylthiophene)-block-Poly(vinylphenyl oxadiazole) Donor-Acceptor Rod-Coil Block Copolymers and Their Memory Device Applications

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. Nonvolatile Polymer Memory with Nanoconfinement of Ferroelectric Crystals

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4. Interface Engineering and Device Applications of 2D Ultrathin Film/Ferroelectric Copolymer P(VDF‐TrFE);Advanced Physics Research;2022-11-25

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