Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices-Reference-Cited by-同舟云学术

Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices

Published:2022 Issue:10 Volume:14 Page:3738-3747
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Das Nayan C.¹^ORCID,Kim Minjae¹,Rani Jarnardhanan R.¹,Hong Sung-Min¹,Jang Jae-Hyung²^ORCID

Affiliation:

1. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea

2. School of Energy Engineering, Korea Institute of Energy Technology, Naju 58330, South Korea

Abstract

This study investigates the temperature-independent switching characteristics of magnesium fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K down to 77 K.

Funder

National Research Foundation of Korea

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR05887H

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