A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement-Reference-Cited by-同舟云学术

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A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

Published:2016 Issue:3 Volume:8 Page:1383-1389
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kim Han Joon,Park Min Hyuk,Kim Yu Jin,Lee Young Hwan,Moon Taehwan,Kim Keum Do,Hyun Seung Dam,Hwang Cheol Seong

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR05339K

Reference29 articles.

1. Ferroelectricity in hafnium oxide thin films

2. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

4. The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

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