Performance limit of monolayer MoSi2N4 transistors-Reference-Cited by-同舟云学术

Performance limit of monolayer MoSi2N4 transistors

Published:2021 Issue:41 Volume:9 Page:14683-14698
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Xiaotian¹^ORCID,Song Zhigang²^ORCID,Huo Nannan¹,Liu Shiqi³^ORCID,Yang Chen³^ORCID,Yang Jie³,Wang Weizhou¹^ORCID,Lu Jing³⁴⁵⁶^ORCID

Affiliation:

1. College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang 471934, P. R. China

2. Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

3. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

5. Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, P. R. China

6. Peking University Yangtze Delta Institute of Optoelectronics Peking University, Nantong 226010, P. R. China

Abstract

The ultra-short gate-length ML MoSi2N4 MOSFET can meet the ITRS requirements with low power dissipation.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02937A

Reference65 articles.

1. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

2. L. X.Ruge Quhe , S.Liu,Y. Wang , H.Li , C.Yang , J.Yang , Q.Li , B.Shi , Y.Pan , X.Sun , Y.Li , J.Li , M.Weng , H.Zhang , Y.Guo , L.Xu , J.Yang , Z.Zhang , M.Lei , F.Pan and J.Lu , Sub-10 nm Two-Dimensional Transistors: Theory and Experiment. Phys. Rep. 2021, in press

3. Electronics based on two-dimensional materials

4. Electrical contacts to two-dimensional semiconductors

5. First-principles study of square phase MX2 and Janus MXY (M=Mo, W; X, Y=S, Se, Te) transition metal dichalcogenide monolayers under biaxial strain

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MoSi2N4/WO2 van der Waals heterostructure: Theoretical prediction of an effective strategy to boost MoSi2N4′s nanoelectronic and optoelectronic applications;Computational Materials Science;2024-01

2. Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices;ACS Applied Electronic Materials;2023-12-28

3. Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices;Physical Review Applied;2023-12-26

4. p-Type High-Performance WSi₂N₄ MOSFETs with the Ultrashort Scale of Sub-5 nm;ACS Applied Electronic Materials;2023-12-06

5. P-type cold-source field-effect transistors with TcX ₂ and ReX ₂ (X = S, Se) cold source electrodes: A computational study;Chinese Physics B;2023-12-01