Optimizing the photoresponse enhancement in a hybrid inorganic–organic phototransistor with an amorphous indium gallium zinc oxide channel layer and PTCDI-C<sub>13</sub> photoactive layer-Reference-Cited by-同舟云学术

Optimizing the photoresponse enhancement in a hybrid inorganic–organic phototransistor with an amorphous indium gallium zinc oxide channel layer and PTCDI-C₁₃ photoactive layer

Published:2022 Issue:35 Volume:10 Page:12621-12629
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tarsoly Gergely¹^ORCID,Lee Jae-Yun¹,Jeong Yong Jin²^ORCID,Pyo Seungmoon³^ORCID,Kim Sung-Jin¹^ORCID

Affiliation:

1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Korea

2. Department of Materials Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea

3. Department of Chemistry, Konkuk University, Seoul 05029, Korea

Abstract

Metal oxide semiconductors offer high charge carrier mobility, while organic ones absorb visible light. A phototransistor with an IGZO and a PTCDI-C13 bilayer is formed, and the charge transfer between the layers is improved by thermal annealing.

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC02087D

Reference52 articles.

1. Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

2. Significant Performance Improvement of Solution-Processed Metal Oxide Transistors by Ligand Dissociation through Coupled Temperature–Time Treatment of Aqueous Precursors