Significant Performance Improvement of Solution-Processed Metal Oxide Transistors by Ligand Dissociation through Coupled Temperature–Time Treatment of Aqueous Precursors-Reference-Cited by-同舟云学术

Significant Performance Improvement of Solution-Processed Metal Oxide Transistors by Ligand Dissociation through Coupled Temperature–Time Treatment of Aqueous Precursors

Published:2019-03-07 Issue:4 Volume:1 Page:505-512
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Park Junyong¹,Gergely Tarsoly¹,Rim You Seung²^ORCID,Pyo Seungmoon¹^ORCID

Affiliation:

1. Department of Chemistry, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea

2. School of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00117

Reference39 articles.

1. Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

2. Metal oxide semiconductor thin-film transistors for flexible electronics

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

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