High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics-Reference-Cited by-同舟云学术

High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics

Published:2017 Issue:29 Volume:9 Page:10350-10357
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Xu Mingkun¹²³⁴⁵,Wang Jimmy¹²³⁴,Xue Zhaoguo¹²³⁴^ORCID,Wang Junzhuan¹²³⁴,Feng Ping¹²³⁴,Yu Linwei¹²³⁴⁶^ORCID,Xu Jun¹²³⁴,Shi Yi¹²³⁴,Chen Kunji¹²³⁴,Roca i Cabarrocas Pere⁶⁷⁸⁹¹⁰

Affiliation:

1. National Laboratory of Solid State Microstructures and School of Electronics Science and Engineering/Collaborative Innovation Centre of Advanced Microstructures

2. Nanjing University

3. Nanjing 210093

4. China

5. College of Mechanical and Electronic Engineering

6. LPICM

7. CNRS

8. Ecole Polytechnique

9. Universite Paris-Saclay

10. 91128 Palaiseau

Abstract

A robust nano-droplet-scanning crystallization of a-Si into a self-positioned and transparent Si nanowire array for high performance fin-like thin film transistors.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR02825C

Reference45 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Liquid crystal alignment in advanced flat-panel liquid crystal displays