Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process
Author:
Affiliation:
1. Laboratory of Inorganic Chemistry
2. Department of Chemistry
3. University of Helsinki
4. Finland
5. Department of Physics
6. University of Jyväskylä
7. Division of Material Physics
Abstract
A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03079J
Reference39 articles.
1. Synthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition
2. Industrial Applications of Atomic Layer Deposition
3. Atomic layer deposition of nanostructured materials, ed. N. Pinna and M. Knez, Wiley VCH, Weinheim, Germany, 2012
4. Atomic Layer Deposition for Semiconductors, ed. C. S. Hwang, Springer Science + Business Media, New York, 2014
5. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
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