Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors-Reference-Cited by-同舟云学术

Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors

Published:2019 Issue:35 Volume:21 Page:19567-19574
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhao Jianwei¹²³⁴⁵,Cheng Na¹²³⁴⁵^ORCID,He Yuanyuan¹²³⁴⁵^ORCID

Affiliation:

1. College of Material and Textile Engineering

2. China-Australia Institute for Advanced Materials and Manufacturing

3. Jiaxing University

4. Jiaxing 314001

5. China

Abstract

The one-dimensional (1D) acceptor–donor (A–D) hetero-nanotube (HNT) has attracted much attention as a potential candidate for a channel structure of next-generation field effect transistors (FETs).

Funder

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP03456K

Reference45 articles.

1. MoS 2 transistors with 1-nanometer gate lengths

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3. Roles of Fullerene-Based Interlayers in Enhancing the Performance of Organometal Perovskite Thin-Film Solar Cells

4. Vertical GAAFETs for the Ultimate CMOS Scaling

5. Device Performance of Silicon Nanotube Field Effect Transistor

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