Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode-Reference-Cited by-同舟云学术

Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Published:2020 Issue:16 Volume:12 Page:9024-9031
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Goh Youngin¹²³⁴^ORCID,Cho Sung Hyun⁵²³⁴,Park Sang-Hee Ko⁵²³⁴^ORCID,Jeon Sanghun¹²³⁴^ORCID

Affiliation:

1. School of Electrical Engineering

2. Korea Advanced Institute of Science and Technology (KAIST)

3. Daejeon 34141

4. Korea

5. Material Science and Engineering

Abstract

Recently, hafnia ferroelectrics with two spontaneous polarization states have attracted marked attention for non-volatile, super-steep switching devices, and neuromorphic application due to their fast switching, scalability, and CMOS compatibility.

Funder

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00933D

Reference24 articles.

1. Physics of thin-film ferroelectric oxides

2. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

3. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

4. Steep-slope hysteresis-free negative capacitance MoS2 transistors

5. Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

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